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STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

Sanhuang electronics (Hong Kong) Co., Limited
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    Buy cheap STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor from wholesalers
     
    Buy cheap STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor from wholesalers
    • Buy cheap STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor from wholesalers

    STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

    Ask Lasest Price
    Brand Name : in
    Model Number : STAV58010P2
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : 3550 pcs In stock
    Delivery Time : 5-8 work days
    • Product Details
    • Company Profile

    STAV58010P2 Gallium Nitride 50V, 10W, DC-6GHz RF Power Transistor

    Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor

    Description

    The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz.
    It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
    It can support CW, pulse or any modulated signal.
    There is no guarantee of performance when this part is used outside of stated frequencies.

    • Typical Class AB Single--Carrier W--CDMA Characterization Performance:

    VDD = 50 Vdc, IDQ = 20 mA, Input Signal PAR = 10 dB @ 0.01% Probability on CCDF.
    (On innogration application board with device soldered)

    Freq
    (MHz)

    Pout
    (dBm)

    CCDF
    (dB)

    Ppeak
    (dBm)

    Ppeak
    (W)

    ACRP
    (dBc)

    Gain
    (dB)

    Eff
    (%)

    3300

    33.009.1242.1216.3-35.916.827.8
    340032.999.0442.0316.0-36.317.127.8
    350033.008.9241.9215.6-37.117.428.7
    360032.978.9041.8815.4-38.117.527.4
    370033.008.9741.9715.7-39.417.427.4
    380033.018.9041.9115.5-40.716.625.7


    Applications

    • 5G, 4G wireless infrastructure
    • Wideband or narrowband power amplifier
    • Test instruments
    • Civil pulse radar
    • Jammer





















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