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Brand Name : | in |
Model Number : | STAV58010P2 |
Price : | Based on current price |
Payment Terms : | T/T |
Supply Ability : | 3550 pcs In stock |
Delivery Time : | 5-8 work days |
Gallium Nitride 50V, 16W, DC-6GHz RF Power Transistor
Description
The STAV58016P2 is a 16 watt, unmatched GaN HEMT, ideal for general applications up to 6GHz.
It features high gain, wide band and low cost, in 4*4.5mm DFN plastic package.
It can support CW, pulse or any modulated signal.
There is no guarantee of performance when this part is used outside of stated frequencies.
VDD = 50 Vdc, IDQ = 20 mA, Input Signal PAR = 10 dB @ 0.01% Probability on CCDF.
(On innogration application board with device soldered)
Freq | Pout | CCDF | Ppeak | Ppeak | ACRP | Gain | Eff |
---|---|---|---|---|---|---|---|
3300 | 33.00 | 9.12 | 42.12 | 16.3 | -35.9 | 16.8 | 27.8 |
3400 | 32.99 | 9.04 | 42.03 | 16.0 | -36.3 | 17.1 | 27.8 |
3500 | 33.00 | 8.92 | 41.92 | 15.6 | -37.1 | 17.4 | 28.7 |
3600 | 32.97 | 8.90 | 41.88 | 15.4 | -38.1 | 17.5 | 27.4 |
3700 | 33.00 | 8.97 | 41.97 | 15.7 | -39.4 | 17.4 | 27.4 |
3800 | 33.01 | 8.90 | 41.91 | 15.5 | -40.7 | 16.6 | 25.7 |
Applications
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