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IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc

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    Buy cheap IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc from wholesalers
     
    Buy cheap IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc from wholesalers
    • Buy cheap IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc from wholesalers

    IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc

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    Brand Name : ISSI, Integrated Silicon Solution Inc
    Model Number : IS43R16160F-6BLI
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
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    IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc

    Product Details


    FEATURES

    • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
    • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
    - Backward compatible to 1.5V
    • High speed data transfer rates with system frequency up to 933 MHz
    • 8 internal banks for concurrent operation
    • 8n-Bit pre-fetch architecture
    • Programmable CAS Latency
    • Programmable Additive Latency: 0, CL-1,CL-2
    • Programmable CAS WRITE latency (CWL) based on tCK
    • Programmable Burst Length: 4 and 8
    • Programmable Burst Sequence: Sequential or Interleave
    • BL switch on the fly
    • Auto Self Refresh(ASR)
    • Self Refresh Temperature(SRT)
    • Refresh Interval:
    7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
    3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
    • Partial Array Self Refresh
    • Asynchronous RESET pin
    • TDQS (Termination Data Strobe) supported (x8 only)
    • OCD (Off-Chip Driver Impedance Adjustment)
    • Dynamic ODT (On-Die Termination)
    • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
    • Write Leveling
    • Up to 200 MHz in DLL off mode
    • Operating temperature:
    Commercial (TC = 0°C to +95°C)
    Industrial (TC = -40°C to +95°C)
    Automotive, A1 (TC = -40°C to +95°C)
    Automotive, A2 (TC = -40°C to +105°C)

    Specifications

    AttributeAttribute Value
    ManufacturerISSI
    Product CategoryMemory ICs
    Series-
    PackagingTray Alternate Packaging
    Package-Case60-TFBGA
    Operating-Temperature-40°C ~ 85°C (TA)
    InterfaceParallel
    Voltage-Supply2.3 V ~ 2.7 V
    Supplier-Device-Package60-TFBGA (8x13)
    Memory Capacity256M (16M x 16)
    Memory-TypeDDR SDRAM
    Speed166MHz
    Format-MemoryRAM

    Descriptions

    SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 166MHz 700ps 60-TFBGA (8x13)
    DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.5V 60-Pin TFBGA
    DRAM 256M, 2.5V, DDR, 16Mx16, 166MHz
    Quality IS43R16160F-6BLI IC DRAM 256MBIT PAR 60TFBGA ISSI, Integrated Silicon Solution Inc for sale
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