Sign In | Join Free | My himfr.com
Home > Flash Memory IC >

MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.

Sanhuang electronics (Hong Kong) Co., Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now
    Buy cheap MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc. from wholesalers
     
    Buy cheap MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc. from wholesalers
    • Buy cheap MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc. from wholesalers

    MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.

    Ask Lasest Price
    Brand Name : Micron Technology Inc.
    Model Number : MT49H16M18SJ-25:B TR
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
    • Company Profile

    MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc.

    Product Details


    GENERAL DESCRIPTION

    The Micron® 256Mb Reduced Latency DRAM (RLDRAM) contains 8 banks x32Mb of memory accessible with 32-bit or 16-bit I/Os in a double data rate (DDR) format where the data is provided and synchronized with a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized for fast random access and high-speed bandwidth.
    RLDRAM is designed for communication data storages like transmit or receive buffers in telecommunication systems as well as data or instruction cache applications requiring large amounts of memory.

    FEATURES

    • 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O
    • Cyclic bank addressing for maximum data out bandwidth
    • Non-multiplexed addresses
    • Non-interruptible sequential burst of two (2-bit
    prefetch) and four (4-bit prefetch) DDR
    • Target 600 Mb/s/p data rate
    • Programmable Read Latency (RL) of 5-8
    • Data valid signal (DVLD) activated as read data is available
    • Data Mask signals (DM0/DM1) to mask first and
    second part of write data burst
    • IEEE 1149.1 compliant JTAG boundary scan
    • Pseudo-HSTL 1.8V I/O Supply
    • Internal Auto Precharge
    • Refresh requirements: 32ms at 100°C junction
    temperature (8K refresh for each bank, 64K refresh
    command must be issued in total each 32ms)

    Specifications

    AttributeAttribute Value
    ManufacturerMicron Technology Inc.
    Product CategoryMemory ICs
    Series-
    PackagingTape & Reel (TR) Alternate Packaging
    Package-Case144-TFBGA
    Operating-Temperature0°C ~ 95°C (TC)
    InterfaceParallel
    Voltage-Supply1.7 V ~ 1.9 V
    Supplier-Device-Package144-μBGA (18.5x11)
    Memory Capacity288M (16M x 18)
    Memory-TypeRLDRAM 2
    Speed2.5ns
    Format-MemoryRAM

    Descriptions

    DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20ns 144-FBGA (18.5x11)
    Quality MT49H16M18SJ-25:B TR IC DRAM 288MBIT PARALLEL 144FBGA Micron Technology Inc. for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: Sanhuang electronics (Hong Kong) Co., Limited
    *Subject:
    *Message:
    Characters Remaining: (0/3000)