Sign In | Join Free | My himfr.com
Home > Flash Memory IC >

MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

Sanhuang electronics (Hong Kong) Co., Limited
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now
    Buy cheap MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. from wholesalers
     
    Buy cheap MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. from wholesalers
    • Buy cheap MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. from wholesalers

    MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

    Ask Lasest Price
    Brand Name : Micron Technology Inc.
    Model Number : MT46V16M16CY-5B IT:M
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
    • Company Profile

    MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

    Product Details


    GENERAL DESCRIPTION

    The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 interface and the 2n-prefetch architecture.

    FEATURES

    • 167 MHz Clock, 333 Mb/s/p data rate
    •VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
    • Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte)
    • Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
    • Differential clock inputs (CK and CK#)
    • Commands entered on each positive CK edge
    • DQS edge-aligned with data for READs; center aligned with data for WRITEs
    • DLL to align DQ and DQS transitions with CK
    • Four internal banks for concurrent operation
    • Data mask (DM) for masking write data (x16 has two - one per byte)
    • Programmable burst lengths: 2, 4, or 8
    • Concurrent Auto Precharge option supported
    • Auto Refresh and Self Refresh Modes
    • FBGA package available
    • 2.5V I/O (SSTL_2 compatible)
    • tRAS lockout (tRAP =tRCD)
    • Backwards compatible with DDR200 and DDR266

    Specifications

    AttributeAttribute Value
    ManufacturerMicron Technology Inc.
    Product CategoryMemory ICs
    Series-
    PackagingTray Alternate Packaging
    Package-Case60-TFBGA
    Operating-Temperature-40°C ~ 85°C (TA)
    InterfaceParallel
    Voltage-Supply2.5 V ~ 2.7 V
    Supplier-Device-Package60-FBGA (8x12.5)
    Memory Capacity256M (16M x 16)
    Memory-TypeDDR SDRAM
    Speed5ns
    Format-MemoryRAM

    Descriptions

    SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)
    DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.6V 60-Pin FBGA
    Quality MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc. for sale
    Inquiry Cart 0
    Send your message to this supplier
     
    *From:
    *To: Sanhuang electronics (Hong Kong) Co., Limited
    *Subject:
    *Message:
    Characters Remaining: (0/3000)