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MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc.

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    Buy cheap MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc. from wholesalers
     
    Buy cheap MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc. from wholesalers
    • Buy cheap MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc. from wholesalers

    MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc.

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    Brand Name : Micron Technology Inc.
    Model Number : MT40A1G4RH-083E:B
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
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    MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc.

    Product Details


    DESCRIPTION

    These 1500 watt transient voltage suppressors offer power-handling capabilities only found in larger packages. They are most often used for protecting against transients from inductive switching environments or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. With very fast response times, they are also effective in protection from ESD or EFT. Powermite® package features include a full metallic bottom that eliminates the possibility of solder-flux entrapment during assembly. They also provide unique locking tab acting as an integral heat sink. With its very short terminations, parasitic inductance is minimized to reduce voltage overshoots during fast-rise-time transients.

    FEATURES

    • Very low profile surface mount package (1.1mm)
    • Integral heat sink-locking tabs
    • Compatible with automatic insertion equipment
    • Full metallic bottom eliminates flux entrapment
    • Voltage range 5 volts to 170 volts
    • Available in both unidirectional or bi-directional (C suffix for bi-directional)

    MAXIMUM RATINGS

    • Operating Temperature: -55°C to +150°C
    • Storage Temperature: -55°C to +150°C
    • 1500 Watt peak pulse power (10 / 1000 µsec.)
    • Forward Surge Current: 200 Amps at 8.3 ms (excluding bidirectional)
    • Repetition surge rate (duty factor): 0.01%
    • Thermal resistance: 2.5°C / watt junction to tab 130°C / watt junction to ambient with recommended footprint
    • Lead and mounting temperature: 260°C for 10 sec

    APPLICATIONS / BENEFITS

    • Secondary lightning transient protection
    • Inductive switching transient protection
    • Small footprint
    • Very low parasitic inductance for minimal voltage overshoot
    • Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively and IEC61000-4-5 for surge levels defined herein

    Specifications

    AttributeAttribute Value
    ManufacturerMicron Technology Inc.
    Product CategoryMemory ICs
    Series-
    PackagingTray
    Package-Case78-TFBGA
    Operating-Temperature0°C ~ 95°C (TC)
    InterfaceParallel
    Voltage-Supply1.14 V ~ 1.26 V
    Supplier-Device-Package78-FBGA (9x10.5)
    Memory Capacity4G (1G x 4)
    Memory-TypeDDR4 SDRAM
    Speed18ns
    Format-MemoryRAM

    Descriptions

    SDRAM - DDR4 Memory IC 4Gb (1G x 4) Parallel 1.2GHz 78-FBGA (9x10.5)
    DRAM Chip DDR4 SDRAM 4Gbit 1Gx4 1.2V 78-Pin FBGA
    Quality MT40A1G4RH-083E:B IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Micron Technology Inc. for sale
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