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MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc.

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    Buy cheap MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc. from wholesalers
     
    Buy cheap MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc. from wholesalers
    • Buy cheap MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc. from wholesalers

    MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc.

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    Brand Name : Micron Technology Inc.
    Model Number : MT28F004B3VG-8 B
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
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    MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc.

    Product Details


    GENERAL DESCRIPTION

    The MT28F004B3 (x8) and MT28F400B3 (x16/x8) are nonvolatile, electrically block-erasable (flash), programmable memory devices containing 4,194,304 bits organized as 262,144 words (16 bits) or 524,288 bytes (8 bits). Writing or erasing the device is done with either a 3.3V or 5V VPP voltage, while all operations are performed with a 3.3V VCC. Due to process technology advances, 5V VPP is optimal for application and production programming. These devices are fabricated with Micron’s advanced 0.18µm CMOS floating-gate process.
    The MT28F004B3 and MT28F400B3 are organized into seven separately erasable blocks. To ensure that critical firmware is protected from accidental erasure or overwrite, the devices feature a hardware-protected boot block. Writing or erasing the boot block requires either applying a super-voltage to the RP# pin or driving WP# HIGH in addition to executing the normal write or erase sequences. This block may be used to store code implemented in low-level system recovery. The remaining blocks vary in density and are written and erased with no additional security measures.

    FEATURES

    • Seven erase blocks:
    16KB/8K-word boot block (protected)
    Two 8KB/4K-word parameter blocks
    Four main memory blocks
    • Smart 3 technology (B3):
    3.3V ±0.3V VCC
    3.3V ±0.3V VPP application programming
    5V ±10% VPP application/production programming1
    • Compatible with 0.3µm Smart 3 device
    • Advanced 0.18µm CMOS floating-gate process
    • Address access time: 80ns
    • 100,000 ERASE cycles
    • Industry-standard pinouts
    • Inputs and outputs are fully TTL-compatible
    • Automated write and erase algorithm
    • Two-cycle WRITE/ERASE sequence
    • Byte- or word-wide READ and WRITE
    (MT28F400B3, 256K x 16/512K x 8)
    • Byte-wide READ and WRITE only
    (MT28F004B3, 512K x 8)
    • TSOP and SOP packaging options

    Specifications

    AttributeAttribute Value
    ManufacturerMicron Technology Inc.
    Product CategoryMemory ICs
    Series-
    PackagingTray
    Package-Case40-TFSOP (0.724", 18.40mm Width)
    Operating-Temperature0°C ~ 70°C (TA)
    InterfaceParallel
    Voltage-Supply3 V ~ 3.6 V
    Supplier-Device-Package40-TSOP I
    Memory Capacity4M (512K x 8)
    Memory-TypeFLASH - NOR
    Speed80ns
    Format-MemoryFLASH

    Descriptions

    FLASH - NOR Memory IC 4Mb (512K x 8) Parallel 80ns 40-TSOP I
    Quality MT28F004B3VG-8 B IC FLASH 4MBIT PARALLEL 40TSOP I Micron Technology Inc. for sale
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