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MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc.

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    Buy cheap MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc. from wholesalers
     
    Buy cheap MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc. from wholesalers
    • Buy cheap MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc. from wholesalers

    MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc.

    Ask Lasest Price
    Brand Name : Micron Technology Inc.
    Model Number : MT29F256G08CKCDBJ5-6R:D
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
    • Company Profile

    MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc.

    Product Details


    General Description

    Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

    Features

    • Open NAND Flash Interface (ONFI) 2.2-compliant1
    • Multiple-level cell (MLC) technology
    • Organization
    – Page size x8: 8640 bytes (8192 + 448 bytes)
    – Block size: 256 pages (2048K + 112K bytes)
    – Plane size: 2 planes x 2048 blocks per plane
    – Device size: 64Gb: 4096 blocks;
    128Gb: 8192 blocks;
    256Gb: 16,384 blocks;
    512Gb: 32,786 blocks
    • Synchronous I/O performance
    – Up to synchronous timing mode 5
    – Clock rate: 10ns (DDR)
    – Read/write throughput per pin: 200 MT/s
    • Asynchronous I/O performance
    – Up to asynchronous timing mode 5

    tRC/tWC: 20ns (MIN)
    • Array performance
    – Read page: 50µs (MAX)
    – Program page: 1300µs (TYP)
    – Erase block: 3ms (TYP)
    • Operating Voltage Range
    – VCC: 2.7–3.6V
    – VCCQ: 1.7–1.95V, 2.7–3.6V
    • Command set: ONFI NAND Flash Protocol
    • Advanced Command Set
    – Program cache
    – Read cache sequential
    – Read cache random
    – One-time programmable (OTP) mode
    – Multi-plane commands
    – Multi-LUN operations
    – Read unique ID
    – Copyback
    • First block (block address 00h) is valid when shipped
    from factory. For minimum required ECC, see
    Error Management (page 109).
    • RESET (FFh) required as first command after power
    on
    • Operation status byte provides software method for
    detecting
    – Operation completion
    – Pass/fail condition
    – Write-protect status
    • Data strobe (DQS) signals provide a hardware method
    for synchronizing data DQ in the synchronous
    interface
    • Copyback operations supported within the plane
    from which data is read
    • Quality and reliability
    – Data retention: 10 years
    – Endurance: 5000 PROGRAM/ERASE cycles
    • Operating temperature:
    – Commercial: 0°C to +70°C
    – Industrial (IT): –40ºC to +85ºC
    • Package
    – 52-pad LGA
    – 48-pin TSOP
    – 100-ball BGA

    Specifications

    AttributeAttribute Value
    ManufacturerMicron Technology Inc.
    Product CategoryMemory ICs
    Series-
    Packaging* Alternate Packaging
    Package-Case*
    Operating-Temperature0°C ~ 70°C (TA)
    InterfaceParallel
    Voltage-Supply2.7 V ~ 3.6 V
    Supplier-Device-Package*
    Memory Capacity256G (32G x 8)
    Memory-TypeFLASH - NAND
    Speed-
    Format-MemoryFLASH

    Descriptions

    FLASH - NAND Memory IC 256Gb (32G x 8) Parallel 167MHz
    NAND FLASH, MLC NAND
    Quality MT29F256G08CKCDBJ5-6R:D IC FLASH 256GBIT PAR 132TBGA Micron Technology Inc. for sale
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