DESCRIPTION

TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices.

FEATURES

• High-speed access times: 25, 35 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater noise immunity
• Easy memory expansion with CS1 and OE options
• CS1 power-down
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single power supply
VDD 1.65V to 2.2V (IS62WV102416ALL)
speed = 35ns for VDD 1.65V to 2.2V
VDD 2.4V to 3.6V (IS62/65WV102416BLL)
speed = 25ns for VDD 2.4V to 3.6V
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes