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S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

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    Buy cheap S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp from wholesalers
     
    Buy cheap S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp from wholesalers
    • Buy cheap S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp from wholesalers

    S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

    Ask Lasest Price
    Brand Name : Cypress Semiconductor Corp
    Model Number : S29WS064RABBHW010
    Price : Based on current price
    Payment Terms : T/T
    Supply Ability : In stock
    Delivery Time : 3-5 work days
    • Product Details
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    S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp

    Product Details


    General Description

    The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins. These products can operate up to 80 MHz and use a single VCC of 1.7 V to 1.95 V that makes them ideal for today’s demanding wireless applications requiring higher density, better performance and lowered power consumption.

    Distinctive Characteristics

    ■ Single 1.8 V read/program/erase (1.70–1.95 V)
    ■ 110 nm MirrorBit™ Technology
    ■ Simultaneous Read/Write operation with zero
    latency
    ■ 32-word Write Buffer
    ■ Sixteen-bank architecture consisting of 16/8/4
    Mwords for WS256N/128N/064N, respectively
    ■ Four 16 Kword sectors at both top and bottom of
    memory array
    ■ 254/126/62 64 Kword sectors (WS256N/128N/
    064N)
    ■ Programmable burst read modes
    — Linear for 32, 16 or 8 words linear read with or
    without wrap-around
    — Continuous sequential read mode
    ■ SecSi™ (Secured Silicon) Sector region consisting
    of 128 words each for factory and customer
    ■ 20-year data retention (typical)
    ■ Cycling Endurance: 100,000 cycles per sector
    (typical)
    ■ RDY output indicates data available to system
    ■ Command set compatible with JEDEC (42.4)
    standard
    ■ Hardware (WP#) protection of top and bottom
    sectors
    ■ Dual boot sector configuration (top and bottom)
    ■ Offered Packages
    — WS064N: 80-ball FBGA (7 mm x 9 mm)
    — WS256N/128N: 84-ball FBGA (8 mm x 11.6 mm)
    ■ Low VCC write inhibit
    ■ Persistent and Password methods of Advanced
    Sector Protection
    ■ Write operation status bits indicate program and
    erase operation completion
    ■ Suspend and Resume commands for Program and
    Erase operations
    ■ Unlock Bypass program command to reduce
    programming time
    ■ Synchronous or Asynchronous program operation,
    independent of burst control register settings
    ■ ACC input pin to reduce factory programming time
    ■ Support for Common Flash Interface (CFI)
    ■ Industrial Temperature range (contact factory)

    Specifications

    AttributeAttribute Value
    ManufacturerCypress Semiconductor
    Product CategoryMemory ICs
    SeriesWS-R
    PackagingTray
    Mounting-StyleSMD/SMT
    Operating-Temperature-Range- 25 C to + 85 C
    Package-Case*
    Operating-Temperature-25°C ~ 85°C (TA)
    InterfaceParallel
    Voltage-Supply1.7 V ~ 1.95 V
    Supplier-Device-Package*
    Memory Capacity64M (4M x 16)
    Memory-TypeFLASH - NOR
    Speed108MHz
    ArchitectureSector
    Format-MemoryFLASH
    StandardCommon Flash Interface (CFI)
    Interface-TypeParallel
    Organization4 M x 16
    Supply-Current-Max44 mA
    Data-Bus-Width16 bit
    Supply-Voltage-Max1.95 V
    Supply-Voltage-Min1.7 V
    Package-CaseFBGA-84
    Maximum-Clock-Frequency108 MHz
    Timing-TypeAsynchronous Synchronous
    Functional compatible componentForm,Package,Functional compatible component
    Manufacturer Part#DescriptionManufacturerCompare
    S29WS064R0SBHW000
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW000
    S29WS064R0SBHW013
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW013
    S29WS064RABBHW010
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW010
    S29WS064R0SBHW010
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW010
    S29WS064R0PBHW010
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW010
    S29WS064R0SBHW003
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0SBHW003
    S29WS064RABBHW013
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW013
    S29WS064R0PBHW013
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW013
    S29WS064RABBHW003
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064RABBHW003
    S29WS064R0PBHW000
    Memory
    Flash, 4MX16, 80ns, PBGA84, 11.60 X 8 MM, LEAD FREE, FBGA-84Cypress SemiconductorS29WS064RABBHW010 vs S29WS064R0PBHW000

    Descriptions

    FLASH - NOR Memory IC 64Mb (4M x 16) Parallel 108MHz 80ns 84-FBGA (11.6x8)
    NOR Flash Parallel 1.8V 64M-bit 4M x 16 80ns 84-Pin TFBGA Tray
    Flash Memory
    Quality S29WS064RABBHW010 IC FLASH 64MBIT PARALLEL 84FBGA Cypress Semiconductor Corp for sale
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